| 摘要 |
PROBLEM TO BE SOLVED: To make the wire bonding surface of a semiconductor laser wafer flat by constituting the wire bonding surface-side electrode of the wafer in a multilayer structure composed of an ohmic metal, a high-melting point metal, and a wire bonding metal. SOLUTION: On the surface of a semiconductor wafer to which a wire 3 is bonded, an ohmic contact is formed by sequentially stacking AuGeNi (1,000Å) 10/Ti (500Å) 20/and Al (10,000Å) 11 by sputtering in this order from the semiconductor crystal side and heat-treating the laminated layers at 500 deg.C. Thereafter, a pattern is formed by photolithography and wet etching. When the pattern is formed, the reaction between semiconductor crystal and the bonding metal (Al) 11 is suppressed and a flat wire bonding surface 2 is obtained, because the Ti 20 which is a high-melting point metal is interposed between the AuGeNi 10 and Al 11. Therefore, the wire 3 can be bonded to the flat surface.
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