发明名称 |
Method of fabricating a TFT-LCD |
摘要 |
The present invention includes patterning a metal layer on a glass substrate. A dielectric layer is formed on the metal layer. An amorphous silicon layer is subsequently formed on the dielectric layer. A first positive photoresist is formed on the amorphous silicon layer. Then, a back-side exposure is used by using the gate electrodes as a mask. A bake step is performed to expand the lower portion of the photoresist. Next, a second positive photoresist layer is formed on the amorphous silicon layer and the residual first positive photoresist layer. A further back-side exposure is employed again from the back side of the substrate using the gate electrode as the mask. A second back step is applied to expand the lower portion of the second positive photoresist layer. An ion implantation is performed by using the second positive photoresist as a mask. Next, the substrate is then annealed. Amorphous silicon layer is then patterned. A further dielectric layer for isolation is formed on the patterned amorphous silicon layer. Source and drain are patterned on the dielectric layer to contact with the amorphous silicon layer. Subsequently, a passivation layer is deposited on the source and drain.
|
申请公布号 |
US6063653(A) |
申请公布日期 |
2000.05.16 |
申请号 |
US19980111279 |
申请日期 |
1998.07.07 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LIN, KANG-CHENG;LIN, GWO-LONG |
分类号 |
G03F7/20;H01L21/336;(IPC1-7):H01L21/84 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|