发明名称 Surface treatment for bonding pad
摘要 A surface treatment method for bonding pad is described, in which a passivation layer is formed on a bonding pad and an opening is formed within the passivation by a plasma etching process. The bonding pad is corroded by the etching plasma containing fluorine during the etching process. The bonding pad is rinsed with deionized water comprising carbon dioxide to reduce the effects of the corrosion phenomenon.
申请公布号 US6063207(A) 申请公布日期 2000.05.16
申请号 US19990241525 申请日期 1999.02.01
申请人 UNITED SEMICONDUCTOR CORP. 发明人 YU, CHIA-CHIEH;CHOU, TA-CHENG
分类号 H01L21/60;(IPC1-7):H01L21/00;C23F1/00 主分类号 H01L21/60
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