发明名称 METHOD FOR FORMING METAL PLUG OF SEMICONDUCTOR DEVICES
摘要 PURPOSE: A metal plug formation method is provided to improve a step coverage of contact hole and a yield by flattening upper portion of the metal plug without convex formation. CONSTITUTION: An insulating layer(12) having contact holes is formed on a lower conductive layer(11). After depositing a barrier metal(13), a metal film(14) having low contact resistance is filled into the contact hole, wherein the line-width of the metal film(14) is wider than that of the contact hole. An ARC(anti-reflection coating) film(15) is formed on the metal film(14). Then, the resultant structure is etched in order to remain the metal film(14) only on the upper portion of the contact hole, and the exposed barrier metal(13) is removed. The protrusive metal film(14) is then polished, thereby forming a flat metal plug.
申请公布号 KR20000027705(A) 申请公布日期 2000.05.15
申请号 KR19980045703 申请日期 1998.10.29
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 PARK, GEUN SOO
分类号 H01L21/28;(IPC1-7):H01L21/28 主分类号 H01L21/28
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