| 摘要 |
PURPOSE: A method for forming a field oxide is provided to simplify manufacturing process and prevent a damage of sides of field oxide by forming a spacer using oxidation process. CONSTITUTION: After depositing a pad oxide(15) on a semiconductor substrate(10), a field region(25) is defined by etching the pad oxide(15). A nitride layer(30) is deposited on the field region(25). A trench(35) is formed by etching the field region(25) and the silicon substrate(10). After depositing a trench oxide(43) at sides of the trench, a field oxide(45) is formed by filling and polishing the trench. By removing the remained nitride layer(30), a spaced part(50) is formed. Then, by performing oxidation process, a spacer(55) is formed at the spaced part(50).
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