| 摘要 |
PURPOSE: A method for manufacturing split gate type flash EEPROM cell is provided to prevent current leakage of a floating gate and a control gate with respect to a select gate by forming a thermal oxide layer on a spacer of a nitride layer. CONSTITUTION: In a method for manufacturing split gate type flash EEPROM cell, a stack edgate structure is first formed by forming a tunnel oxide layer(110), a floating gate(113), a dielectric layer(116), a control gate(119) and an insulating layer(122) on a semiconductor substrate in this order. Then, a source/drain is formed on the substrate, and a first oxide layer(125) is formed on both sides of the stacked gate structure, after which a nitride spacer(128A) is formed on the first oxide layer(125). A buffer oxide layer(140) is formed on the substrate while covering the nitride spacer, then ions are doped. After removing the buffer oxide layer(140), a second oxide layer(143) is formed on the nitride spacer. Next, after forming a select gate insulating layer(131) on the exposed semiconductor substrate, a select gate(134) is formed.
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