| 摘要 |
PURPOSE: A metal wire formation method using damascene process is provided to prevent a loss of upper portion of tungsten plug by forming a tungsten nitride layer on the tungsten plug. CONSTITUTION: By selective etching an oxide layer(3), a contact hole is formed to expose portions of a conductive layer(2) and a poly-wire(4). After depositing a barrier layer(5), a tungsten plug(6) is filled into the contact hole. By forming a tungsten nitride layer(7) on the tungsten plug(6) using annealing process at N2 gas atmosphere, the tungsten nitride layer(7) used as an etching stopper and barrier. Thereby, the upper of the tungsten plug(6) is protected from etching for forming a metal wire(10).
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