发明名称 FLASH MEMORY CELL STRUCTURE
摘要 PURPOSE: A flash memory cell structure is provided to improve the productivity by omitting a triple-well drive-in process conducted at a downstream process for manufacturing a cell using a triple-well. CONSTITUTION: A flash memory cell structure includes a triple-well formed in a substrate. A pick-up well(100) for receiving a triple-well pick-up region(22) is formed enclosing a periphery of a cell active region while being partly overlapped on the triple-well(22). As a triple-well pick-up is formed in the pick-up well(100), a pick-up well region can be formed without performing a triple-well drive-in process.
申请公布号 KR20000027565(A) 申请公布日期 2000.05.15
申请号 KR19980045517 申请日期 1998.10.28
申请人 HYUNDAI ELECTRONICS IND. CO., LTD. 发明人 YOU, YOUNG SEON;PARK, SEUNG HEE;AHN, BYUNG JIN
分类号 H01L27/115;(IPC1-7):H01L27/115 主分类号 H01L27/115
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