发明名称 |
FLASH MEMORY CELL STRUCTURE |
摘要 |
PURPOSE: A flash memory cell structure is provided to improve the productivity by omitting a triple-well drive-in process conducted at a downstream process for manufacturing a cell using a triple-well. CONSTITUTION: A flash memory cell structure includes a triple-well formed in a substrate. A pick-up well(100) for receiving a triple-well pick-up region(22) is formed enclosing a periphery of a cell active region while being partly overlapped on the triple-well(22). As a triple-well pick-up is formed in the pick-up well(100), a pick-up well region can be formed without performing a triple-well drive-in process.
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申请公布号 |
KR20000027565(A) |
申请公布日期 |
2000.05.15 |
申请号 |
KR19980045517 |
申请日期 |
1998.10.28 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
YOU, YOUNG SEON;PARK, SEUNG HEE;AHN, BYUNG JIN |
分类号 |
H01L27/115;(IPC1-7):H01L27/115 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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地址 |
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