SEMICONDUCTOR DEVICE AND METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are to reduce a short channel effect and a thyristor capacitance in an SOI(silicon on insulator) device, thereby improving an operating characteristic. CONSTITUTION: A buried oxide film(31a) is formed in a semiconductor substrate(30a), and a gate gap nitride film(35) is close to the buried oxide film. A gate electrode(34) and a gate oxide film(33) are laminated on the gate gap nitride film. A sidewall spacer(37) is formed on sidewalls of the gate electrode and gate gap nitride film. A p-typed semiconductor layer(32) functioning as a channel region is formed on the gate oxide film. An epitaxial layer(40) is formed on a sidewall of the p-typed semiconductor layer in such a way that it is close to the p-typed semiconductor layer in a region in which a device operate and it is not close to the p-typed semiconductor layer in a region in which the device does not operate.