| 摘要 |
PURPOSE: A crystallizing equipment reducing metal pollution is provided to deposit a metal in a small amount by plasma and to consecutively crystallize the metal in one chamber, after depositing an amorphous silicone thin film with a plasma CVD(Chemical Vapor Deposition) method. CONSTITUTION: A crystallizing equipment of an amorphous film using plasma exposes the plasma on the amorphous film, to crystallize the amorphous film formed on a substrate, and anneals the amorphous film. The equipment performs the exposing process and the annealing process, simultaneously. The equipment deposits the amorphous film with a plasma CVD(Chemical Vapor Deposition) method, and exposes plasma using a metal electrode which the amorphous film is not deposited on a surface of the metal electrode. The equipment partly exposes the plasma on the amorphous film, and exposes RF(Radio Frequency) or DC(Direct Current) plasma on the amorphous film. An annealing temperature crystallizes the amorphous film in 300 to 1000 degrees centigrade after the plasma is exposed. An electrode for forming the plasma is nickel or a nickel composition. The exposed time to the plasma is from 0.1 sec to 1000 sec. Gas pressure for forming the plasma is from 0.5mTorr to 100Torr.
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