发明名称 |
Oxidation barrier composed of a silicide alloy for a thin film and method of construction |
摘要 |
A method of fabricating an oxidation barrier for a thin film is provided. The method may include forming a thin film (10) outwardly from a semiconductor substrate (12) and separated from the semiconductor substrate (12) by a primary insulator layer (14). A reactive layer (16) may be formed in-situ adjacent to the thin film (10). An oxidation barrier (20) may be formed by a chemical reaction between the thin film (10) and the reactive layer (16). The oxidation barrier (20) may comprise a silicide alloy that operates to reduce oxidation of the thin film (10).
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申请公布号 |
US6063692(A) |
申请公布日期 |
2000.05.16 |
申请号 |
US19980211454 |
申请日期 |
1998.12.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LEE, WEI WILLIAM;LUTTMER, JOSEPH D.;YANG, HONG |
分类号 |
H01L21/28;H01L21/336;H01L29/49;(IPC1-7):G02F1/17 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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