SEMICONDUCTOR APPARATUS EQUIPPED WITH AN ELECTROSTATIC DISCHARGE PROTECTION DEVICE.

摘要

PURPOSE: An apparatus is provided to improve latch-up and ESD characteristics and to enhance the reliability and characteristics of a semiconductor device by forming a new ESD current path with lowering a breakdown voltage. CONSTITUTION: An ESD protection device has a first conductive-type MOS and a second conductive -type MOS having a source region connected to a data output pin. Second conductive-type well guide rings 10 are formed on a first conductive-type substrate planned for an ESD region. First and second conductive-type wells are formed inside the second conductive-type well guide rings(10). A second conductive-type well pickup(14) is formed between the second conductive-type well and the second conductive-type well guide rings(10).