METHOD FOR FORMING TRANSISTOR OF SEMICONDUCTOR DEVICES

摘要

PURPOSE: A transistor formation method is provided to prevent a short-channel effect, improve a punch-through and reduce a leakage current by forming a channel region having a trench structure. CONSTITUTION: By selectively etching a silicon substrate(10), a trench is formed in a channel region. A gate oxide(11) and a polysilicon layer(12) are formed on the resultant structure. A gate electrode(12A) is formed by etching the polysilicon layer(12). A source and drain regions(S,D) are formed in the silicon substrate(10) by ion-implantation. The length of the gate electrode(12A) is long compared to the length of the trench in order to prevent asymmetric effects between the source(S) and the drain(D).