METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING REDUCED CONTACT RESISTANCE

摘要

PURPOSE: A semiconductor fabrication method is provided to reduce a contact resistance between a plug and an upper conductive layer by reflowing the upper conductive layer. CONSTITUTION: A lower conductive layer(106) is formed on a semiconductor substrate(102), and an insulator(108) is formed on the lower conductive layer. By patterning the insulator(108), a contact hole(110) for exposing the lower conductive layer(106) is formed. A metal barrier(112b) for preventing junction spike is formed on the resultant structure. After filling a conductive material into the contact hole, a plug(114p) is formed by removing the metal barrier and the conductive material using CMP. After depositing an upper conductive layer(116), successively aluminum reflow is performed in same furnace. Thereby, aluminum is filled into a seam(114a) existed in the plug(114p).