| 摘要 |
A method and a device for producing a mask that can be used in an electron beam exposure system in a shorter time and at lower costs, wherein a circuit pattern (P5c) formed on a wafer (5C) is magnified alpha . beta times and divided into N pieces to prepare partial master patterns (Pi (i=1 to N)) and master reticles (Ri (i=1 to N)) each describing a corresponding partial master pattern are prepared. A region on a mask substrate (1D) in which a mask pattern (P1d) is formed is etched from the rear surface thereof to be formed into a thin film and reduced images (PIi (i=1 to N)) each obtained by reducing 1/ beta times a partial master pattern (Pi) of a master reticle (Ri) are transferred onto the mask substrate (1D) by an optical projection exposure system while performing an image joining, thereby producing a working mask (WM4) for an electron beam exposure system. |
