METHOD FOR FORMING A CONTACT HOLE OF SEMICONDUCTOR MEMORY DEVICES

摘要

PURPOSE: A contact hole formation method is provided to reduce a leakage current due to loss of substrate and improve a yield by using two-step etching processes having different receipt. CONSTITUTION: A contact hole formation method comprises the steps of firstly etching using a first etcher, and secondly etching using a second etcher different from the first etcher. The firstly etching process is performed for 33 seconds, at pressure of 400 mTorr, and in power of 1300 Watts using 40 CHF3, 70 CF4, 600 Ar gas atmosphere. The secondly etching process is performed for 33-66 seconds, at pressure of 250-400 mTorr, and in power of 1300 Watts using 40-60 CHF3, 30-70 CF4, 400-600 Ar gas.