FERROEELCTRIC RANDOM ACCESS MEMORY DEVICES HAVING IMPROVED SENSING MARGIN

摘要

PURPOSE: An FRAM device is provided to improve a sensing margin and extend a life of the memory by pre charging a bit line to a power supplied voltage(Vcc) and setting a reference voltage for sensing to the Vcc. CONSTITUTION: A memory cell(650) includes a first and a second ferroelectric capacitors(FC1,FC2) connected in serial between a first and a second plate lines(PL1,PL2), and an NMOS transistor(TR) connected to a node between the plate lines(PL1,PL2). A sensing amplifier(640) senses and amplifies voltage differency between a positive bit line(BL) and a negative bit line(/BL). A data input part(610) is transferred a positive and a negative data to the BL and /BL corresponding to a write enable signal. A bit line precharge part(620) pre charges the BL and /BL to a power supplied voltage(Vcc) corresponding to a second control signal. A high voltage driver(660) operates a word line(WL) and the first plate line(PL1) by 2Vcc.