METHOD OF MANUFACTURING DUAL GATE OXIDE LAYER

摘要

PURPOSE: A method of manufacturing a dual gate oxide layer is provided to simplify the manufacturing process and control the boron penetration phenomenon of the thin gate oxide layer. CONSTITUTION: A method of manufacturing a dual gate oxide layer comprises the steps of: evaporating a low-temperature oxynitride layer after defining a region for a thick gate oxide layer(A region) and a region for a thin gate oxide layer(B region) on a semiconductor substrate, and again evaporating a high-temperature low-pressure oxidation layer on the oxynitride layer; forming a photoresist layer on the high-temperature low-pressure oxide layer of the region B and etching the high-temperature low-pressure oxide layer formed on the upper of the region B and the oxynitride layer; eliminating the photoresist layer of the region B and eliminating the exposed high-temperature low-pressure oxide layer; forming a thick gate oxide layer(14) and a thin gate oxide layer(15) by performing a thermal oxidizing process in the regions A and B.