| 摘要 |
PURPOSE: A method for forming a gate electrode is to improve the reliability of a device by ion implanting an oxygen ion into a silicon layer deposited at an amorphous state and then depositing a silicide layer on the silicon layer. CONSTITUTION: A gate oxide layer(2) is formed on a semiconductor substrate(1). An amorphous silicon layer is deposited on the gate oxide layer at a temperature of less than 550 deg.C. Then, oxygen ions are implanted into the amorphous silicon layer. A polycrystalline silicon layer(3') is formed by performing an impurity doping and an annealing process about the amorphous silicon layer. The polycrystalline silicon layer has a grain boundary therein. When the oxygen ions are gathered, a Si-O bonding is formed by combining a Si with the oxygen ion. A tungsten silicide layer(5) is formed on the polycrystalline silicon layer. The tungsten silicide layer, the polycrystalline silicon layer, and the gate oxide layer are etched through a mask and an etching process.
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