METHOD OF FORMING PAD METAL OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a pad metal of a semiconductor device is provided to prevent gold from penetrating a semiconductor substrate in manufacturing an alloy by adding platinum between titanium and gold and forming the pad metal to use the platinum as a barrier metal. CONSTITUTION: A method of forming a pad metal(140) comprises the steps of: forming a passivation layer(123) on the entire surface after forming a semiconductor element in an active region(120); eliminating a selected region of the passivation layer and forming a P-OHmic metal(126) in the eliminated region; and sequentially forming titanium(131), platinum(134) and gold(137) on the entire structure including the passivation layer and the P-OHmic metal and forming a pad metal(140) composed of titanium, platinum and gold by patterning and alloy process.