| 摘要 |
PROBLEM TO BE SOLVED: To prevent sidewall damages of a laminated gate structure and damages to an active region at self-alignment source etching. SOLUTION: A plurality of field oxide film 112 stretching on a semiconductor substrate 100 are formed, and a plurality of active regions are limited. A gate oxide film 114, a floating gate 120, an inter-gate insulating film 125 and a control gate 130 which turn to a plurality of laminated gates vertical to the plurality of active regions are formed. A source region 148 and a drain region 143 are formed in the active region which is exposed between the laminated gates. An etching damage preventing film 150 is formed on the whole surface of the laminated gates and the exposed active regions. The field oxide films 112 exposed from between the laminated gates are etched, and the semiconducdor substrate 100 is exposed. Impurities are implanted in the exposed semiconductor substrate 100, and a source line diffusion layer which connects the source region 148 in parallel with the laminated gates is formed.
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