发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To restrain generation of depressions on the upper part of a wiring layer above plugs. SOLUTION: This method contains the processes (a)-(e), in which (a) a process for forming an impurity diffused layer 34, (b) a process for forming an interlayer insulating layer 40 having through-holes 42, on the impurity diffused layer 34, (c) a process for forming plugs 50 in the through-holes 42, (d) a process for forming a substratum layer 62 on the plugs 50 and the interlayer insulating layer 40, and (e) a process for forming an aluminum layer 64 on the substratum layer 62. The aluminum layer 64 is formed under the conditions that temperature of a substrate is at least 250 deg.C and pressure is reduced.
申请公布号 JP2000133712(A) 申请公布日期 2000.05.12
申请号 JP19990204720 申请日期 1999.07.19
申请人 SEIKO EPSON CORP 发明人 KASUYA YOSHIKAZU
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L23/52;(IPC1-7):H01L21/768;H01L21/320 主分类号 H01L21/28
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