| 摘要 |
PROBLEM TO BE SOLVED: To prevent pressure in a reference pressure chamber from becoming ununiform due to gas generated from a junction interface in heat-treating process for bonding semiconductor substrates, in a semiconductor pressure sensor in which the reference pressure chamber is formed by sticking both of the substrates with each other. SOLUTION: In this semiconductor pressure sensor 100, a cavity 3 is formed on one surface of a first semiconductor substrate 1, a second semiconductor substrate 2 is stuck on the one surface so as to cover the cavity 3, and the substrates 1, 2 are bonded to each other by heat treatment. A reference pressure chamber is formed by the cavity 3 and the second semiconductor substrate 2. Around the cavity 3 in the junction interface of both the substrates 1, 2, a trap chamber 5 for trapping the gas generated from the junction interface in the case of the heat treatment is arranged surrounding the cavity 3.
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