| 摘要 |
PROBLEM TO BE SOLVED: To form a paraelectric capacitor and a ferroelectric capacitor uing a metallic oxide dielectric material, by a method wherein a material is etched using a hard mask formed of a nitride of a compound of titanium with aluminum, and a plasma activating etchant set at a temperature in a specified range and containing chlorine, oxygen and nitrogen. SOLUTION: Sidewall dielectric bodies 308 are formed on a silicon substrate 300 and the dielectric bodies 308 are covered with a planarized dielectric layer 314. Then, holes are demarcated in the layer 314, a material is etched to form bit lines 316 and a dielectric layer 318 is formed on the bit lines 316 and the remaining layer 314. Subsequently, an adhesion layer 324 consisting of titanium and aluminum layers is deposited on the layer 318, and a hard mask layer 328 consisting of titanium and aluminium layers is deposited on the layer 324 via a Pt layer 326. An ARC layer 329 is deposited on this layer 328 and the layer 328 and the ARC layer 329 are etched using a plasma activating etchant. |
