| 摘要 |
PROBLEM TO BE SOLVED: To improve hydrogenation treatment of a polycrystalline semiconductor thin film and obtain a state of high mobility for a thin-film transistor. SOLUTION: When a thin-film transistor is manufactured by forming a lamination structure on an insulating substrate 11, which a structure includes a polycrystalline semiconductor thin film, a gate insulating film which is in contact with one surface side of the thin film, and a gate electrode stacked on the semiconductor thin film via the gate insulating film, active hydrogen is formed by bringing a material gas containing hydrogen into contact with a catalyzer 73 heated at 1,000 deg.C to 2,000 deg.C, and crystal defects are repaired by introducing active hydrogen in the semiconductor thin film.
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