发明名称 Verfharen zum Herstellen eines mit hartem Material bedeckten Halbleiters
摘要 A complex wafer (2) having a soft, fragile substrate and a hard-material film coating on the substrate is difficult to polish, because of the hardness of the film, the fragility of the substrate and the inherent distortion. The complex wafer (2) is stuck in a convex-distorted shape to a holder (3). Preferably, a buffer (11) is inserted between the wafer (2) and the bottom of the holder (3). Further, insertion of a convex spacer is effective to reform a inherently flat wafer (2) or a inherently concave-distorted wafer (2) into a convex-distortion on the holder (3). The holder (3) can incline a little to its own shaft (4). The convex-distorted wafer (2) is in contact with a rotary whetstone turn-table (1). Auxiliary shafts (10) push the periphery of the holder (3) for inclining the holder (3). Slight slanting of the holder (3) changes the contact point on the wafer (2). The slanting angle can be adjusted by the allotment of the force between the main shaft (4) and the auxiliary shafts (10). The roughness of the polished surface is less than Rmax50nm and less than Ra20nm. <IMAGE>
申请公布号 DE69516035(D1) 申请公布日期 2000.05.11
申请号 DE1995616035 申请日期 1995.04.27
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 TANABE, KEIICHIRO;IKEGAYA, AKIHIKO;SEKI, YUICHIRO;FUJIMORI, NAOJI
分类号 B24B37/04;C23C16/27;C23C16/56;H01L21/306;(IPC1-7):B24B37/04;B24B19/22 主分类号 B24B37/04
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