发明名称 CHEMICAL MECHANICAL POLISHING A SUBSTRATE HAVING A FILLER LAYER AND A STOP LAYER
摘要 <p>A substrate (10) is chemical mechanical polished with a high-selectivity slurry until the stop layer (14) is at least partially exposed, and then the substrate (10) is polished with a low-selectivity slurry until the stop layer (14) is completely exposed.</p>
申请公布号 WO2000025984(A1) 申请公布日期 2000.05.11
申请号 US1999025183 申请日期 1999.10.26
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