发明名称 Semiconductor device
摘要 The coupling has a gate that is connected to either VDD or VSS. Either the source (S), drain (D) or the substrate (SUB) is connected to the other power source. A capacitance coupling is formed between the power source voltages by a capacitance formed between the gate (G) and the source, drain or substrate.
申请公布号 GB0006852(D0) 申请公布日期 2000.05.10
申请号 GB20000006852 申请日期 2000.03.21
申请人 ADVANTEST CORPORATION 发明人
分类号 H01L27/04;H01L21/822;H01L21/8238;H01L27/06;H01L27/092;H03K5/00 主分类号 H01L27/04
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