Infrared sensor and infrared sensor array comprising the same

摘要

An infrared sensor of the invention includes a first heat-type infrared sensor element section that is made of a resistor or connected junction diodes and formed via a dielectric layer on a silicon substrate. In order to solve the problem that an output signal of the sensor element is influenced by a temperature change of the sensor, the sensor has a second temperature sensing element section, which detects a temperature of the whole sensor. The output difference between the first and the second sensor element is used as gate/source voltage of a MOSFET. The current variation of the MOSFET is read out as a discharged amount of a capacitor connected to the MOSFET. The noise in the sensor is suppressed, and a performance of the sensor is improved. An infrared-sensors array is constructed by arranging the sensors in an array or by disposing in each column of the array the aforementioned sensor element compensating temperature change. The noise of the sensor array is suppressed, and a high-performance sensor array is obtained.