发明名称 |
Polishing agent used for polishing semiconductor silicon wafers and polishing method using the same |
摘要 |
A semiconductor silicon wafer polishing agent and a polishing method using the same are provided for avoiding the need for an increased purity of a polishing agent which may cause a prohibitively high cost, while still preventing semiconductor wafers from being contaminated by metals, particularly by copper and nickel, in a polishing process. The semiconductor silicon wafer polishing agent comprises a silica containing polishing agent as a main component, and Cu and Ni respectively in concentration of 0.01 to 1 ppb with respect to the total amount of the polishing agent. |
申请公布号 |
US6060396(A) |
申请公布日期 |
2000.05.09 |
申请号 |
US19980209483 |
申请日期 |
1998.12.11 |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD. |
发明人 |
FUKAMI, TERUAKI;TAKAKU, TSUTOMU |
分类号 |
B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/306;(IPC1-7):H01L21/00 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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