发明名称 Polishing agent used for polishing semiconductor silicon wafers and polishing method using the same
摘要 A semiconductor silicon wafer polishing agent and a polishing method using the same are provided for avoiding the need for an increased purity of a polishing agent which may cause a prohibitively high cost, while still preventing semiconductor wafers from being contaminated by metals, particularly by copper and nickel, in a polishing process. The semiconductor silicon wafer polishing agent comprises a silica containing polishing agent as a main component, and Cu and Ni respectively in concentration of 0.01 to 1 ppb with respect to the total amount of the polishing agent.
申请公布号 US6060396(A) 申请公布日期 2000.05.09
申请号 US19980209483 申请日期 1998.12.11
申请人 SHIN-ETSU HANDOTAI CO., LTD. 发明人 FUKAMI, TERUAKI;TAKAKU, TSUTOMU
分类号 B24B37/00;C09G1/02;C09K3/14;H01L21/304;H01L21/306;(IPC1-7):H01L21/00 主分类号 B24B37/00
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