| 摘要 |
Methods of forming polycrystalline semiconductor layers include the steps of forming a first polycrystalline semiconductor layer on a first amorphous semiconductor layer. The first polycrystalline semiconductor layer is then converted to a second amorphous semiconductor layer. At least a portion of the second amorphous semiconductor layer is then converted to a second polycrystalline semiconductor layer. In particular, relatively large size crystal grains may be produced in a semiconductor layer by converting the second amorphous semiconductor layer and at least a portion of the first amorphous semiconductor layer to a second polycrystalline semiconductor layer.
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