| 摘要 |
PURPOSE: A flash memory cell array is provided to improve reliability of devices by forming a well contact within a cell array region to make same the voltage state of a source and the well at which place of the cell array. CONSTITUTION: A flash memory cell array includes source lines(49) for applying a voltage to sources(45) through source contacts. The source lines(49) are formed in a semiconductor substrate in which wells are formed with an unit cell of a flash memory cell consisting of a floating gate(42), a control gate(43), a source(45) and a drain(44). Bit lines(46) apply a voltage to the drain(44) through drain contacts(47). Well contacts(51) for applying a voltage to the wells is formed outside of the cell array. The well contacts(51) are formed between the drain contacts(47) around the source contacts. The source lines(49) connected to the source contacts is connected to the well contacts(51).
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