PREPARATION OF ALUMINUM NITRIDE FILM ON (111) SUBSTRATE USING AN ORGANOALUMINUM COMPOUND

摘要

PURPOSE: A process for growing aluminium nitride easy to grow to a hexagonal shape using a single precursor is provided. In the process, a chemical vapor deposition is carried out two or more times with a multistage. CONSTITUTION: The aluminium nitride film is formed on a silica matrix by introducing bis£dimethyl-μ-(1,1')-dimethylhydrizido)-aluminium| or bis£dimethyl-μ -1,1'-dimethylhydrazido)-aluminium| vapor on a silica(III) surface and chemical vapor deposition at 400 to 900deg.C for 5 to 47 hr under pressure of 1.0x10¬-5 to 2.0x10¬-4 mbar.