| 摘要 |
Provided is a semiconductor device which, by reducing stress focus at junction corners, suppresses or prevents cracks from advancing in a solder layer in temperature cycling and other reliability tests; also provided is a production method of said semiconductor device. This semiconductor device has a connection structure which, by mounting a semiconductor chip (3) on an insulation substrate (1) comprising conductor patterns (2a, 2b) junction-formed on both sides, and by bonding the insulating substrate (1) to a heat dissipation base member (4), is capable of externally dissipating heat generated by the semiconductor chip (3). Of the conductor patterns (2a, 2b), the conductor patterns (2b) junction-formed on the side of the heat dissipation base member (4) are formed such that the periphery of the junction with the insulating substrate (1) is thinner than the center of said junction. As a result, the fixation layer of solder, etc., in the junction periphery can be formed thicker than the junction center of the conduction patterns (2a, 2b). |
