INTERNAL OPERATION VOLTAGE GENERATION CIRCUIT

摘要

PURPOSE: An initial operating voltage generating circuit of a semiconductor memory device is provided to discriminate stand-by operation and active operation, and to generate the initial operating voltage from different paths to stable the operating voltage as well as to reduce chip size by simplifying an initial operating voltage generator. CONSTITUTION: The initial operating voltage generating circuit of the semiconductor memory device includes the first converter(3), the second converter(4), a selector(2) and a noise reducer(Cs). The first converter receives the first source voltage applied from the outward of the device and decreases the received voltage into the second source voltage which is used inside of the device. The second converter has a resistance greater than the first converter, receives the first source voltage and decreases the received voltage into the second source voltage. The selector performs switching between the first source voltage and the second converter during an operation mode of the device. The noise reducer is coupled between an output terminal of the first converter and the second converter and a ground voltage and rejects the noise component from the second source voltage.