PROCESS FOR FABRICATING METAL INTERCONNECTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming metal wire of a semiconductor device is provided to improve electric insulation of metal wire and to perform patterning process of a metal layer easily by using aluminium oxide film as an etching mask. CONSTITUTION: An insulating film(2) is formed on a silicon substrate(1) and copper is deposited on the silicon substrate(1) to form a metal layer(3). A metal oxide film(4) made of aluminium is formed on the metal layer(3), and then, a photoresist pattern formed on the metal oxide film(4). The metal oxide film(4) is etched by using the photoresist pattern as a mask. The metal layer(3) is etched by a plasma etching process using gases of chlorine or fluorine. In this case, the metal layer(3) is etched by using the metal oxide film(4) as a mask. The metal oxide film(4) made of aluminium has high insulating characteristic and high etching profile than a conventional photoresist film.