METHOD OF FORMING METAL INTERCONNECTOR IN SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a metal line of a semiconductor device is provided to prevent a ring defect of an Al alloy layer by forming an Al2O3 layer and an anti-reflective layer on an Al alloy layer. CONSTITUTION: An Al alloy layer(35) is formed on an insulating layer formed on a semiconductor substrate(21) with a predetermined lower structure. An Al2O3 layer(37) is formed on an upper portion of the Al alloy layer(35) by using plasma including a mixed gas of Ar and O2. An anti-reflective layer(39) is formed on the Al2O3 layer(37). The Al2O3 layer(37) and the Al alloy layer(35) are patterned by using a metal line mask as an etching mask. A metal line is formed by patterning the Al2O3 layer(37) and the Al alloy layer(35).