发明名称 LPCVD
摘要 PURPOSE: Vertical type equipment for LPCVD(Low Pressure Chemical Vapor Deposition) is provided to improve layer quality and to forming a uniform layer on a semiconductor wafer by inserting vapor gas regularly. CONSTITUTION: Semiconductors wafers(W) are loaded in a boat(17), and the boat(17) is inserted into LPCVD(Low Pressure Chemical Vapor Deposition) equipment through a flange(8). Vapor gas is supplied from a vapor gas storage tank(19) to multiple spray nozzles through a vapor gas supply line(13) and a supply path(12a) in an inner tube(12), and deposited uniformly on the semiconductor wafers(W). After depositing, the supply of vapor gas is stopped by cutting off the vapor gas supply line(13), the remained vapor gas in the inner tube(12) is exhausted through an exhaust line(15).
申请公布号 KR100253271(B1) 申请公布日期 2000.05.01
申请号 KR19960024471 申请日期 1996.06.27
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 YANG, JUNG SIK
分类号 H01L21/203;(IPC1-7):H01L21/203 主分类号 H01L21/203
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