| 摘要 |
PURPOSE: A laser diode is provided to improve thermal conducting characteristic of a capping layer and thereby increasing operating reliability of a laser diode by efficiently emitting heat generated at an active layer through the capping layer. CONSTITUTION: A laser diode comprises a capping layer including five layers. A first thin film layer(100) is made of a GaAs. A second thin film layer(110) made of a GaAs and an AlAs with a predetermined composition ratio is formed on the first thin film layer(100). The third thin film layer(120) made of an AlAs increases thermal conducting characteristic of the capping layer. The fourth thin film layer(130) is made of a GaAs and an AlAs with a composition ratio same as the second thin film layer(110). The fifth thin film layer(140) is made of a GaAs to form an ohmic contact.
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