STRUCTURE OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A structure of a semiconductor device and a manufacturing method thereof are provided to reduce overall size of a semiconductor device efficiently by forming structure of a via hole in a double cubic structure. CONSTITUTION: A field oxide film(22) is formed on a device isolation region of a semiconductor substrate(21). Transistors are formed on active regions isolated by the field oxide film(22). An ILD(interlayer dielectric) layer(23) is formed to have contact holes selectively at entire surface. A lower wiring layer is formed to be in contact with partial region of the transistors. A first IMD(intermetal dielectric) layer(24) is formed to have a first via hole with a first width. A first tungsten plug layer is formed by burying the first via hole of the first IMD layer(24) completely. A second IMD layer(28) is formed to have a second via hole with a second width on the first tungsten plug layer. A second tungsten plug layer is formed by burying the second via hole of the second IMD layer(28). A metal wire layer(30) is formed to be in contact with the second tungsten plug on the second IMD layer(28).