| 发明名称 |
Method for forming interlevel dielectric layer in semiconductor device using electron beams |
| 摘要 |
A method for stabilizing an interlevel dielectric layer formed by a chemical vapor deposition (CVD) process, using electron beams. A CVD oxide layer is formed on a semiconductor substrate. The CVD oxide layer is radiated with electron beams at a temperature of between approximately room temperature and approximately 500 DEG C. for a predetermined time, using an electron beam radiator, to densify the layer.
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| 申请公布号 |
US6057251(A) |
申请公布日期 |
2000.05.02 |
| 申请号 |
US19980164938 |
申请日期 |
1998.10.01 |
| 申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
GOO, JU-SEON;KIM, SEONG-HO;LEE, HAE-JEONG;HWANG, BYUNG-KEUN |
| 分类号 |
H01L21/31;H01L21/3105;H01L21/312;H01L21/316;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
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