| 摘要 |
PROBLEM TO BE SOLVED: To realize a thin film transistor and its manufacturing method wherein dispersion of characteristic of an LDD region can be made small and a manufacturing process is simplified. SOLUTION: An LDD region 3b is formed to self-align by ion implantation by using a gate electrode 5 as a mask. A source region 3c and a drain region 3d of high concentration are formed by ion implantation through an opening 7 for an electrode wiring 8. According to this constitution, it is possible to make the source region 3c, the drain region 3d and the LDD region 3b small, thus reducing a transistor size. Since a gate insulation film 4 is made one layer, a manufacturing process can be thereby simplified.
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