发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device that has a wiring structure for preventing burnout between wiring and the increase in resistance, even if a wiring layer is formed at a position that is deviated from a connection hole. SOLUTION: A semiconductor device is provided with a first insulation layer 6, that is formed on a semiconductor substrate 1 and has a connection hole 7 reaching the surface of the semiconductor substrate 1, an embedded conductive layer 8 that is embedded into the connection hole 7, a wiring layer 12 that is formed on the interlayer insulation layer 6 and the embedded conductive layer 8, an insulator layer 16 that is formed on the surface of the wiring layer 12, and a second insulation layer that is formed on the insulator layer 16 and the first insulation layer.
申请公布号 JP2000124308(A) 申请公布日期 2000.04.28
申请号 JP19980299844 申请日期 1998.10.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 SUGANO ITARU;KONISHI TOKO
分类号 H01L21/768;H01L23/522;(IPC1-7):H01L21/768 主分类号 H01L21/768
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