METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device with a polysilicon layer of a hemisphere-shaped grain is provided to improve density of silicon crystal nuclei by forming twice the silicon crystal nuclei. CONSTITUTION: An amorphous silicon layer(12) is formed on a semiconductor substrate(10). The semiconductor substrate(10) formed with the amorphous silicon layer(12) is loaded on a chamber. A silicon source gas is injected into the chamber in order to seed a silicon crystal core on the amorphous silicon layer(12). The silicon source gas is injected again into the chamber in order to enlarge a size of the silicon crystal core. A polysilicon layer(24) having a hemisphere-shaped grain is formed by annealing the silicon substrate(10) formed with the amorphous silicon layer(12) and the silicon crystal core.