发明名称 CHARGED PARTICLE BEAM EXPOSURE SYSTEM AND METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To realize in a charged particle exposure for division transfer method, where a pattern can be transferred to and exposed to light keeping high resolution and high accuracy by a method, wherein imaging conditions such as form astigmatism caused by differences in pattern distribution in sub-fields are corrected effectively. SOLUTION: Indexes, based on the distribution state of patterns in a sub-field, are given as exposure data to the control section 31 of an exposure system, the corresponding ratio between the optical correction of the sub-fields and the indexes is tabulated into a table 33, the table 33 is stored in the exposure system, and the sub-fields are optically corrected on the basis of the data and the table 33. The indexes are predetermined, based on pattern data at the formed of a reticule and given to the exposure system. The corrections of the table can be rewritten, and the table can be rewritten, corresponding to a current density and the spread angle of the beam. It is not necessary that corrections be stored which correspond to all the correction ranks, and a table can be reduced in volume through an interpolating calculation.
申请公布号 JP2000124113(A) 申请公布日期 2000.04.28
申请号 JP19980306395 申请日期 1998.10.14
申请人 NIKON CORP 发明人 OKINO TERUAKI
分类号 H01J37/305;G03F7/20;H01J37/317;H01L21/027;(IPC1-7):H01L21/027 主分类号 H01J37/305
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