METHOD FOR CHARGING ELECTRIC CHARGE TO FLOATING GATE OF LAMINATED GATE MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To reduce the probability that an excess erase cell erroneously reads out or programs by changing a charge on a floating gate of a device selected by whether a device threshold voltage value on a selected word line is smaller or larger than a target threshold voltage value. SOLUTION: The device 181 on an intersection between a bit line 150 and the word line is selected, applying a voltage of 0 or above to the word line 170 and the bit line 150 and keeping the voltage on the bit line 160 and the word line 180 to 0. The programing/erasure of the selected device is performed by confirming the charge to the floating gate of the device. A confirming cycle is a read-out cycle performed during a programing/erasure cycle of a memory cell array, and a cell is read out using VDS>0, though (VTH-TAR (for erasure)< VCS