| 摘要 |
PROBLEM TO BE SOLVED: To prevent the transistor of a non-selective cell connected to the same word line from turning ON so as to lessen it in power consumption in a DRAM cell. SOLUTION: Transistors T1 and T2 are connected between a data line (e.g. bit line) and a prescribed node ND and turned ON/OFF corresponding to an applied voltage of a selection line (e.g. word line). The transistors T1 and T2 are possessed of a first control electrode G1 connected to a selection line and a second control electrode G2 that controls a threshold voltage corresponding to the applied voltage of control lines CL1 and CL2. A control circuit 2 is connected to the control lines CL1 and CL2. The control circuit 2 sets the threshold voltage of a selection transistor lower than its initial value and/or raises the threshold voltage of the other non-selective transistor. By this setup, when a voltage is applied to a selection line to turn a selection transistor ON, a non-selective transistor connected to the same selection line can be surely put in an OFF state. |
