| 摘要 |
PROBLEM TO BE SOLVED: To confine light effectively by containing a low-temperature depositing buffer layer containing AlN and AlN growing on the low-temperature depositing buffer layer as a clad layer, and to prevent generation of crack. SOLUTION: An AlN low-temperature depositing buffer layer 30 is grown on a sapphire substrate 21 in an organometallic vapor phase growth method, and an n-type GaN layer 23 is formed on the buffer layer 30. Next, after an AlGaN low-temperature depositing buffer layer 31 is grown on the GaN layer 23, an AlGaN clad layer 24 of 10% AlN mol fraction having a thickness of 1μm is formed on the AlGaN low-temperature depositing buffer layer 31. Further, a GaN optical waveguide layer 25, an active layer 26, a GaN optical waveguide layer 27, a p-type AlGaN layer 28 and a p-type GaN contact layer 29 are grown on the clad layer in this order. As a result, light is confined effectively without generating crack.
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