| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device in which a block write is conducted and a high speed writing is made possible. SOLUTION: In a semiconductor storage device, plural digit lines D1, D1B to Dn and DnB are connected to a data bus line pair I/OT and I/OB and a write buffer WA is provided on one of the sides of the pair I/OT and I/OB to write data into memory cells C1, C1B to Cn and CnB. An auxiliary circuit BH is provided on the other side of the pair I/OT and I/OB to speed up a write operation. The circuit BH is constituted of a pair of transistors Q1 and Q2, whose sources and gates are mutually cross-couple-connected between the pair I/OT and I/OB, and control transistors Q3 and Q4 which are provided between the source and the ground of the transistors Q1 and Q2. Either one of a control voltageϕr of a ground level or a power supply voltage level is always applied to the gates of the transistors Q3 and Q4.
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