发明名称 FORMING METHOD FOR METAL-BASED FILM AND MANUFACTURE OF ELECTRONIC DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent contamination of a metal-based film, deterioration of a film-forming shape, or the like that are caused by degassing from an organic macromolecule material, when the metal-based film is formed on a substrate to be treated which contains the organic macromolecule material having low dielectric constant. SOLUTION: A substrate to be treated is heat-treated at a temperature that is at least the degassing start temperature and is lower than thermal decomposition start temperature of an organic macromolecule material 11 in non-oxidizing atmosphere. After this, a metal-based film 16 is formed at a film-forming temperature that is lower than the heat treatment temperature. When the substrate to be treated is not heat-treated, the metal-based film 16 may be formed at a film-forming temperature that is lower than the degassing start temperature.
申请公布号 JP2000124307(A) 申请公布日期 2000.04.28
申请号 JP19980296990 申请日期 1998.10.19
申请人 SONY CORP 发明人 HASEGAWA TOSHIAKI
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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